Analysis on Capacitance-Voltage Characteristics of an Al/4H-SiC Schottky Diode

Abstract

In this paper, an Al/4H-SiC Schottky junction structure has been fabricated by using of thermal method and the C-V measurements of this sample were characterized as a function of the temperature. From C-V data, the net ionized state density and the barrier height values have calculated and its barrier height values were determined to be 1.81 eV at 300 K and 1.93 eV at 8 K. In result, it was seen that C-V barrier height values have increased with the temperature. The effect of image force lowering mechanism which cause Schottky barrier inhomogeneities in Al/4H-SiC is investigated using C-V measurements. In addition, in Al/4H-SiC was observed that the image force-lowering values increase with decreasing temperature.