A new view on image-force lowering effect in Schottky junctions

Abstract

In this paper, the image force lowering effect from Schottky barrier anomalities in metal-semiconductor contacts has been viewed in based of an Al/p-Si Schootky junction and has been presented a new consideration that is; the dielectric constant should be a function of the temperature.Thus, it was seen that the image force lowering values in two separate temperature have increased in the low temperature despite decrease for  =11.8 constant value at 300 K. In addition, the values of the image force lowering have been obtained as 33.0 meV for 200 K and 16.0 meV for 300 K.