A theoretical study of Structural and electronic properties of Al0,125B0,125Ga0,75N; optoelectronic applications


Abstract views: 69 / PDF downloads: 30

Authors

  • Ahmed Memdouh Younsi University of Biskra
  • Abdelaziz Rabehi University of ZianeAchourDjelfa
  • Abdelmalek Douara Tissemsilt University

DOI:

https://doi.org/10.59287/as-abstracts.1431

Keywords:

Al0,125B0,125Ga0,75N, DFT, CASTEP, Band Gap

Abstract

Semiconductor materials are highly valued in the electronics industry. Gallium nitride (GaN) from the family of these compounds is particularly important due to its use in various applications, including P-N junction diodes, transistors, and laser components. Our study focused on the effect of doping GaN with aluminum and boron simultaneously, using density functional theory (DFT) calculations with the Gradient Generalized Approximation (GGA-PBE) implemented in the CASTEP code. Our results showed that the volume of the primitive cell within the hexagonal wurtzite structure was 44.62A3 , and a bulk modulus of 163.07 GPa. In analyzing of the band structure, we found that the energy gap of Al0,125B0,125Ga0,75N was 3.75 eV, higher than the band gap of GaN, which was 3.40 eV.

Author Biographies

Ahmed Memdouh Younsi, University of Biskra

Laboratory of Physics of Photonics and Multifunctional Nanomaterials, BP 145, RP, 07000 Biskra, Algeria.

Materials Science and Informatics Laboratory, University of ZianeAchourDjelfa, Post Office Box 3117, 17000 Djelfa, Algeria.

Abdelaziz Rabehi, University of ZianeAchourDjelfa

Materials Science and Informatics Laboratory,  Post Office Box 3117, 17000 Djelfa, Algeria.

Abdelmalek Douara, Tissemsilt University

Faculty of Science and Technology - Algeria

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Published

2023-09-02

How to Cite

Younsi, A. M., Rabehi, A., & Douara, A. (2023). A theoretical study of Structural and electronic properties of Al0,125B0,125Ga0,75N; optoelectronic applications. All Sciences Abstracts, 1(5), 12. https://doi.org/10.59287/as-abstracts.1431

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