Theoretical investigation of the heat capacity of semiconductors PbSe by using the Einstein-Debye approximation

Abstract

Semiconductor compounds form a chalcogenides series in which a regular change in many properties is observed when the atomic numbers of the components change. Within each group of analog compounds (phosphides, arsenides, and antimonides), a decrease in the melting temperature, hardness, and band gap is observed with an increase in the total atomic number and atomic masses of the elements included in the compound and an increase in the mobility of charge carriers, especially electrons. In this work, we apply the Einstein-Debye approximation based on the Debye model to calculate the specific heat capacity of chalcogenides PbSe lead selenide. The agreement between the calculations and the available literature data is observed to be satisfactory.