Analysis on the capacitance characteristics of an Au/WOx/nSi junction

Abstract

In this work, an Au/WOx/n-Si metal-semiconductor device (MIS) have been realized by the fabrication using the thermal evaporation deposition procedure of WOx thin films on n-cSi. To analyze the electronic structure properties of Au/WOx/n-Si has been used the C-V and G-V measurement techniques at room temperature and for the frequencies which are 250 kHz, 500 kHz, 750 kHz and 1 MHz. The capacitance peaks viewed dependent to the applied frequency of Au/WOx/n-Si sample have been attributed to the bulk trapped charges and the interface states. In addition, it was seen that the capacitance curve of the depletion region under the illumination are the lower capacitance peak than the other capacitance curve which is non-illuminated. In result, it was noted that the illumination is effective on the capacitance curves and their peaks.