On analysis of current-voltage characteristics in an inhomogeneous Al/4H-SiC junction structure


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Authors

  • Murat GÜLNAHAR Erzincan Binali Yıldırım University, Vocational School, 24200 Erzincan, Turkey
  • Fulya Esra Cimilli ÇATIR Erzincan Binali Yıldırım University, Vocational School, 24200 Erzincan, Turkey

Keywords:

4H-Sic, Schottky Diodes, Schottky Barrier Inhomogeneities, Ideality Factor, Barrier Height

Abstract

– In this paper, the current-voltage (I-V) measurements of an Al/4H-SiC Schottky device are characterized as a function of the temperature in 60-300 K temperature range. The series resistance values are calculated to be 12.5 Ω at 300 K from Cheung functions. The experimental parameters such as the ideality factor and apparent barrier height show resolute temperature dependent. These inhomogeneous characteristics observed for Al/4H-SiC are related to Schottky barrier anomalities. Thus, it may be commented that the temperature dependent electrical characteristics of an Al/4H-SiC Schottky sample can be characterized on the basis of the thermionic emission theory.

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Published

2023-02-08

How to Cite

GÜLNAHAR, M., & ÇATIR, F. E. C. (2023). On analysis of current-voltage characteristics in an inhomogeneous Al/4H-SiC junction structure. International Conference on Trends in Advanced Research, 1, 42–47. Retrieved from https://as-proceeding.com/index.php/ictar/article/view/180