On analysis of current-voltage characteristics in an inhomogeneous Al/4H-SiC junction structure

Abstract

– In this paper, the current-voltage (I-V) measurements of an Al/4H-SiC Schottky device are characterized as a function of the temperature in 60-300 K temperature range. The series resistance values are calculated to be 12.5 Ω at 300 K from Cheung functions. The experimental parameters such as the ideality factor and apparent barrier height show resolute temperature dependent. These inhomogeneous characteristics observed for Al/4H-SiC are related to Schottky barrier anomalities. Thus, it may be commented that the temperature dependent electrical characteristics of an Al/4H-SiC Schottky sample can be characterized on the basis of the thermionic emission theory.