A Comprehensive Review on the Effect of DLC Interfacial Layer on Barrier Height in Schottky Diodes
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Keywords:
Diamond-Like Carbon (DLC) Interfacial Layers, Schottky Diode Barrier Height, Interface State Density and Distribution, Metal/DLC/Semiconductor Heterostructures, Electrical Characterization and Theoretical ModelingAbstract
This extensive review examines the effect of diamond-like carbon (DLC) interfacial layers on
Schottky diode barrier height, integrating findings from both early studies and recent work. The paper
first puts the physics and chemistry behind Schottky barrier formation into perspective, highlighting the
key role of interfacial layers and associated states in determining barrier height and device operation. The
emphasis is on the unique features of DLC, tunable electrical characteristics, chemical inertness, and
compatibility with most doping and deposition techniques. The methods discussed involve experimental
investigations of metal/DLC/semiconductor heterostructures, advanced electrical characterization under
varying temperature and bias conditions, and theoretical modeling of interface phenomena. Key findings
indicate that the incorporation of DLC interfacial layers results in significant barrier height changes,
typically a result of variations in the potential drop across the interface state density, distribution and the
presence of series resistance effects. Recent studies also indicate that the barrier height can have multi
Gaussian distributions and high thickness, doping and deposition parameter dependence in DLC. These
points indicate the potential of DLC engineering in controlling Schottky diode behavior, optimizing
device reliability and instilling new functionality in electronic and optoelectronic devices. The review
thus finally focuses on open issues and research trends in order to close the gap between fundamental
science at interfaces and actual device optimization.
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